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Toshiba MG300Q2YS50 Toshiba MG300Q2YS50 Toshiba MG300Q2YS50 Toshiba MG300Q2YS50 Toshiba MG300Q2YS50

#MG300Q2YS50 Toshiba MG300Q2YS50 New TRANS IGBT MODULE N-CH 1200V 400A 7(2-109C1A); 300 Amp; 1200 Volt, MG300Q2YS50 pictures, MG300Q2YS50 price, #MG300Q2YS50 supplier
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MG300Q2YS50 Description

MG300Q2YS50 GTR Module Silicon N Channel IGBT; TRANS IGBT MODULE N-CH 1200V 400A 7(2-109C1A); 300 Amp; 1200 Volt. High Power Switching Applications Motor Control Applications.

MG300Q2YS50  1.10 lbs

Target_Applications

MG300Q2YS50 could be used in High Power Switching / Motor Control Applications

Maximum Ratings(Ta-25°C)

Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:300A
Collector current Icp:600A
Collector power dissipation Pc:2000W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3/3 *1 N·m

TRANS IGBT MODULE N-CH 1200V 400A 7(2-109C1A); 300 Amp; 1200 Volt

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