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Semikron SKM200GB125D Semikron SKM200GB125D

#SKM200GB125D Semikron SKM200GB125D New IGBT Array & Module Transistor Dual N Channel 200 A 3.3 V 1.2 kV Module. , SKM200GB125D pictures, SKM200GB125D price, #SKM200GB125D supplier
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SKM200GB125D Features:
.N channel , homogeneous Si
.Low inductance case
.Short tail current with low temperature dependence
.High short circuit capability, self limiting to 6 x I cnom
.Fast & soft inverse CAL Diodes
.Isolated copper baseplate using DCB Direct Copper Bonding Technology
.Large clearance (13 mm) and creepage distance (20 mm)
Typical Applications:
.Switched mode power supplies at f sw > 20 kHz
.Resonant inverters up to 100 kHz Inductive heating
.Electronic welders at f sw > 20 kHz 

Maximum ratings and characteristics 
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:165A
Collector current Icp:300A
Collector-Emitter voltage VCES:4000V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
 
 

IGBT Array & Module Transistor Dual N Channel 200 A 3.3 V 1.2 kV Module.

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